Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 76, Issue 25, 2000, Pages 3810-3812

  Kawaura, Hisao ^a   Sakamoto, Toshitsugu ^a   Baba, Toshio ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042527899     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126789     Document Type: Article

References (6)

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