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Volumn 76, Issue 25, 2000, Pages 3810-3812
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Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal-oxide-semiconductor field-effect transistors
a
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0042527899
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.126789 Document Type: Article |
Times cited : (97)
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References (6)
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