High performance CMOS bulk technology using direct silicon bond (DSB) mixed crystal orientation substrates

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 225-228

  Sung, Chun Yung ^b   Yin, Haizhou ^a   Ng, Hung Y ^a   Saenger, Katherine L ^b   Chan, Victor ^a   Crowder, Scott W ^a   Li, Jinghong ^a   Ott, John A ^b   Bendernagel, Robert ^a   Kempisty, Jeremy J ^a   Ku, Victor ^a   Lee, H K ^a   Luo, Zhijiong ^a   Madan, Anita ^b   Mo, Renee T ^a   Nguyen, Phung Y ^a   Pfeiffer, Gerd ^a   Raccioppo, Michael ^a   Rovedo, Nivo ^a   Sadana, Devendra ^b   De Souza, Joel P ^b   Zhang, Rong ^a   Ren, Zhibin ^a   Wann, Clement H ^a   more..

^a IBM RESEARCH   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT SILICON BOND (DSB); RING OSCILLATORS; SOLID PHASE EPITAXY (SPE);

CRYSTAL ORIENTATION; FIELD EFFECT TRANSISTORS; HOLE MOBILITY; SILICON; SILICON WAFERS; SUBSTRATES;

CMOS INTEGRATED CIRCUITS;

EID: 33847723902     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. T. Sato, et al., Jpn. J. Appl. Phys. 8, p.588 (1969).
2. M. Yang, et al., IEEE Electron. Device Lett. 24, p.339 (2003).
3. M. Yang et. al., IEDM Tech. Dig. p.453 (2003).
4. M. Yang et al., Symp. on VLSI Tech. Dig. p. 160 (2004).
5. K.L. Saenger et al., Appl. Phys. Lett., accepted.