On the ballistic transport in nanometer-scaled DG MOSFETs

IEEE Transactions on Electron Devices

Volumn 51, Issue 7, 2004, Pages 1148-1155

  Saint Martin, Jérôme ^a   Bournel, Arnaud ^a   Dollfus, Philippe ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; COMPUTER SIMULATION; MONTE CARLO METHODS; MOS DEVICES; NANOTECHNOLOGY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; SPECTRUM ANALYSIS;

BALLISTIC TRANSPORT; CHANNEL TRANSISTOR; DOUBLE GATE MOSFET;

MOSFET DEVICES;

EID: 4344599060     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.829904     Document Type: Article

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