Physics of the subthreshold slope-initial improvement and final degradation in short CMOS devices

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 639-642

  Gwoziecki, R ^a   Skotnicki, T ^b  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES;

CMOS DEVICES; ELECTRICAL SIMULATION; KEY ISSUES; MOSFETS; PHYSICAL ASSUMPTIONS; RAPID DEGRADATION; SUBTHRESHOLD;

CMOS INTEGRATED CIRCUITS;

EID: 44749087981     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.195012     Document Type: Conference Paper

References (7)

1. B.Eitan et al., IEEE TED, Vol. 29, No 2, Feb. 1982, pp. 254-265
2. K-Y.Fu et al., IEEE TED, Vol. 44, No 5, May 1997, pp. 847-855
3. J.S.Fu., IEEE TED, Vol. 31, No 4, April 1984, pp. 440-447
4. E.P.Vandamme et al, IEEE EDL, Vol. 18, No 6, August 1997, pp.369-371
5. T.Skotnicki et al, IEEE TED, Vol. 35, No 7, July 1988, pp. 1076-1086
6. T.Skotnicki et al., IEEE EDL, Vol. 9, No 3, March 1988, pp. 109-112
7. R.Gwoziecki et al., IEEE TED, Vol. 46, No 7, July 1999, pp.1551-1561