Performance and variability comparisons between multi-gate FETs and planar SOI transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Thean, A V Y ^a   Shi, Z H ^a   Mathew, L ^a   Stephens, T ^a   Desjardin, H ^a   Parker, C ^a   White, T ^a   Stoker, M ^a   Prabhu, L ^a   Garcia, R ^a   Nguyen, B Y ^a   Murphy, S ^a   Rai, R ^a   Conner, J ^a   White, B E ^a   Venkatesan, S ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MESFET DEVICES; MOSFET DEVICES;

CHANNEL CONTROL; CHANNEL DEVICES; FINFETS; MULTI-GATE FETS; MULTIPLE-GATE; PLANAR DEVICES; SOI DEVICES; SOI TRANSISTORS;

ELECTRON DEVICES;

EID: 46049091193     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346923     Document Type: Conference Paper

References (4)

1. D. Hisamoto, Proc. Solid-State Integrated Circuits Technology, p. 96, 2004
2. B. Doyle, et. al. Symp. VLSI Tech. Dig. p. 133, 2003
3. T-J. King., IEEE/ACM International Conference on.CAD, p. 207, 2005
4. L. Mathew, Si Nanoelectronics Worshop 2006.