122 Mb high speed SRAM cell with 25 nm gate length Multi-Bridge-Channel MOSFET (MBCFET) on bulk Si substrate

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 68-69

  Kim, Min Sang ^a   Lee, Sung Young ^a   Yoon, Eun Jung ^a   Kim, Sung Min ^a   Lian, Jun ^a   Lee, Kwan Heum ^a   Cho, Nam Myeon ^a   Lee, Mong Sub ^a   Hwang, Duhyun ^a   Lee, Yong Seok ^a   Kim, Dong Won ^a   Park, Donggun ^a   Ryu, Byung Il ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; EMBEDDED SYSTEMS; GATE DIELECTRICS; STATIC RANDOM ACCESS STORAGE; SUBSTRATES;

MULTI-BRIDGE-CHANNEL MOSFET (MBCFET); STATE CURRENT;

MOSFET DEVICES;

EID: 37749045191     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. T. Park, et al., VLSI Tech Dig., p. 135, 2003
2. S. M. Kim, et al., VLSI Tech. Dig., p. 196, 2005
3. S.-Y. Lee, et al., VLSI Tech. Dig., p.200, 2004
4. E. -J. Yoon , et al., IEDM Tech. Dig., p.627, 2004
5. S.-Y. Lee, et al., VLSI Tech. Dig., p. 154, 2005