Refinement of the subthreshold slope modeling for advanced bulk CMOS devices

IEEE Transactions on Electron Devices

Volumn 54, Issue 10, 2007, Pages 2723-2729

  Pouydebasque, Arnaud ^a   Charbuillet, Clément ^b   Gwoziecki, Romain ^c   Skotnicki, Thomas ^b  

^a NXP SEMICONDUCTORS   (France)

^b STMICROELECTRONICS   (France)

^c CEA LETI   (France)

Author keywords

MOSFET; Short channel effects; Subthreshold slope; Voltage doping transformation (VDT)

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); MATHEMATICAL MODELS; SEMICONDUCTOR DOPING;

SHORT-CHANNEL EFFECTS; SUBTHRESHOLD SLOPE; VOLTAGE-DOPING TRANSFORMATION;

CMOS INTEGRATED CIRCUITS;

EID: 35148834606     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.904483     Document Type: Article

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