Dual-metal gate CMOS with HfO2 gate dielectric

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 433-436

  Samavedam, S B ^a   La, L B ^a   Smith, J ^a   Dakshina Murthy, S ^b   Luckowski, E ^a   Schaeffer, J ^a   Zavala, M ^a   Martin, R ^a   Dhandapani, V ^a   Triyoso, D ^a   Tseng, H H ^a   Tobin, P J ^a   Gilmer, D C ^a   Hobbs, C ^a   Taylor, W J ^a   Grant, J M ^a   Hegde, R I ^a   Mogab, J ^a   Thomas, C ^a   Abramowitz, P ^a   Moosa, M ^a   Conner, J ^a   Jiang, J ^a   Arunachalam, V ^a   Sadd, M ^a   Nguyen, B Y ^a   White, B ^a   more..

^a MOTOROLA INC   (United States)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DIELECTRIC MATERIALS; ELECTRIC CHARGE; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; SILICON NITRIDE; TITANIUM NITRIDE;

GATE DIELECTRICS;

MOSFET DEVICES;

EID: 0036927881     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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2. B. Cheng et al., "Metal Gates for Advanced Sub-80-nm SOI CMOS Technology," 2007 IEEE Intl. SOI Symp. Proc., pp. 91-92, 2001.
3. P. Ranade, J. Takeuchi, T-J. King and C. Hu, "Work function engineering of molybdenum gate electrodes by nitrogen implantation," Electrochem. and Solid-State Lett. vol. 4(11), pp. G85-7, 2001.
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8. S. B. Samavedam et al., Proc. Symp. on VLSI Tech. Digest, pp. 24-25, 2002.