Transistors with dual work function metal gates by single full silicidation (FUSI) of polysilicon gates

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 367-370

  Maszara, W P ^a   Krivokapic, Z ^a   King, P ^a   Goo, J S ^a   Lin, M R ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRODES; GATES (TRANSISTOR); POLYSILICON; SUBSTRATES;

METAL GATES;

MOSFET DEVICES;

EID: 0036932380     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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7. Program described in: D. K. Blanks et al., "NEMO: General release of a new comprehensive quantum device simulator," in Proceedings of IEEE 24th International Symposium of Compound Semiconductors, 1998, pp. 639-642