Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 293-296

  Savkina, N S ^a   Strel'chuk, A M ^a   Sorokin, L M ^a   Mosina, G N ^a   Tregubova, A S ^a   Solov'ev, V V ^a   Lebedev, A A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

3C SiC 6H SiC Heterostructure; EL; I V; TEM

Indexed keywords

EPITAXIAL GROWTH; ETCHING; EXCITONS; HETEROJUNCTIONS; MAGNETRON SPUTTERING; PHOTOLITHOGRAPHY; SEMICONDUCTOR DOPING; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

EXCITON ANNIHILATION;

SILICON CARBIDE;

EID: 18744433062     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.293     Document Type: Conference Paper

References (5)

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