Cubic polytype inclusions in 4H-SiC

Journal of Applied Physics

Volumn 93, Issue 3, 2003, Pages 1577-1585

  Iwata, Hisaomi ^a,b   Lindefelt, Ulf ^a,b,c   Öberg, Sven ^d   Briddon, Patrick R ^e  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c ABB SWITZERLAND LTD   (Switzerland)

^d LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^e NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTROMAGNETIC WAVE POLARIZATION; FUNCTIONS; INCLUSIONS; SILICON CARBIDE;

POLYTYPE INCLUSIONS;

STACKING FAULTS;

EID: 0037321525     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1534376     Document Type: Article

References (45)

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10. Concerning the electric degradation problem of SiC-based bipolar devices, see a series of contributions to the International Conference on Silicon Carbide and Related Materials, 2001, J. P. Bergman, H. Jakobsson, L. Storaste, F. H. C. Carlsson, B. Magnusson, S. Sridhara, G. Pozina, H. Lendenmann, and E. Janzén, Mater. Sci. Forum 389-393, 9 (2002); M. Skowronski, ibid. 389-393, 385 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 415 (2002); P. O. Å. Persson, H. Jacobson, J. M. Molina-Aldareguia, J. P. Bergman, T. Tuomi, W. J. Clegg, E. Janzén, and L. Hultman, ibid. 389-393, 423 (2002); R. E. Stahlbush, J. B. Fedison, S. D. Arthur, L. B. Rowland, J. W. Kretchmer, and S. Wang, ibid. 389-393, 427 (2002); A. Galeckas, J. Linnros, and B. Breitholtz, ibid. 389-393, 431 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 435 (2002); R. S. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen, and L. J. Brillson, ibid. 389-393, 451 (2002); S. Bai, G. Wagner, E. Shishkin, W. J. Choyke, R. P. Devaty, M. Zhang, P. Pirouz, and T. Kimoto, ibid. 389-393, 589 (2002); H. Lendenmann, F. Dahlquist, J. P. Bergman, H. Bleichner, and C. Hallin, ibid. 389-393, 1259 (2002); L. M. Hillkrik and M. Bakowski, ibid. 389-393, 1269 (2002); J. Q. Liu, M. Skowronski, C. Hallin, R. Söderholm, and H. Lendenmann, ibid. 389-393, 1281 (2002); U. Zimmermann, J. Österman, J. Zhang, A. Henry, and A. Hallén, ibid. 389-393, 1285 (2002).
11. Concerning the electric degradation problem of SiC-based bipolar devices, see a series of contributions to the International Conference on Silicon Carbide and Related Materials, 2001, J. P. Bergman, H. Jakobsson, L. Storaste, F. H. C. Carlsson, B. Magnusson, S. Sridhara, G. Pozina, H. Lendenmann, and E. Janzén, Mater. Sci. Forum 389-393, 9 (2002); M. Skowronski, ibid. 389-393, 385 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 415 (2002); P. O. Å. Persson, H. Jacobson, J. M. Molina-Aldareguia, J. P. Bergman, T. Tuomi, W. J. Clegg, E. Janzén, and L. Hultman, ibid. 389-393, 423 (2002); R. E. Stahlbush, J. B. Fedison, S. D. Arthur, L. B. Rowland, J. W. Kretchmer, and S. Wang, ibid. 389-393, 427 (2002); A. Galeckas, J. Linnros, and B. Breitholtz, ibid. 389-393, 431 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 435 (2002); R. S. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen, and L. J. Brillson, ibid. 389-393, 451 (2002); S. Bai, G. Wagner, E. Shishkin, W. J. Choyke, R. P. Devaty, M. Zhang, P. Pirouz, and T. Kimoto, ibid. 389-393, 589 (2002); H. Lendenmann, F. Dahlquist, J. P. Bergman, H. Bleichner, and C. Hallin, ibid. 389-393, 1259 (2002); L. M. Hillkrik and M. Bakowski, ibid. 389-393, 1269 (2002); J. Q. Liu, M. Skowronski, C. Hallin, R. Söderholm, and H. Lendenmann, ibid. 389-393, 1281 (2002); U. Zimmermann, J. Österman, J. Zhang, A. Henry, and A. Hallén, ibid. 389-393, 1285 (2002).
12. Concerning the electric degradation problem of SiC-based bipolar devices, see a series of contributions to the International Conference on Silicon Carbide and Related Materials, 2001, J. P. Bergman, H. Jakobsson, L. Storaste, F. H. C. Carlsson, B. Magnusson, S. Sridhara, G. Pozina, H. Lendenmann, and E. Janzén, Mater. Sci. Forum 389-393, 9 (2002); M. Skowronski, ibid. 389-393, 385 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 415 (2002); P. O. Å. Persson, H. Jacobson, J. M. Molina-Aldareguia, J. P. Bergman, T. Tuomi, W. J. Clegg, E. Janzén, and L. Hultman, ibid. 389-393, 423 (2002); R. E. Stahlbush, J. B. Fedison, S. D. Arthur, L. B. Rowland, J. W. Kretchmer, and S. Wang, ibid. 389-393, 427 (2002); A. Galeckas, J. Linnros, and B. Breitholtz, ibid. 389-393, 431 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 435 (2002); R. S. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen, and L. J. Brillson, ibid. 389-393, 451 (2002); S. Bai, G. Wagner, E. Shishkin, W. J. Choyke, R. P. Devaty, M. Zhang, P. Pirouz, and T. Kimoto, ibid. 389-393, 589 (2002); H. Lendenmann, F. Dahlquist, J. P. Bergman, H. Bleichner, and C. Hallin, ibid. 389-393, 1259 (2002); L. M. Hillkrik and M. Bakowski, ibid. 389-393, 1269 (2002); J. Q. Liu, M. Skowronski, C. Hallin, R. Söderholm, and H. Lendenmann, ibid. 389-393, 1281 (2002); U. Zimmermann, J. Österman, J. Zhang, A. Henry, and A. Hallén, ibid. 389-393, 1285 (2002).
13. Concerning the electric degradation problem of SiC-based bipolar devices, see a series of contributions to the International Conference on Silicon Carbide and Related Materials, 2001, J. P. Bergman, H. Jakobsson, L. Storaste, F. H. C. Carlsson, B. Magnusson, S. Sridhara, G. Pozina, H. Lendenmann, and E. Janzén, Mater. Sci. Forum 389-393, 9 (2002); M. Skowronski, ibid. 389-393, 385 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 415 (2002); P. O. Å. Persson, H. Jacobson, J. M. Molina-Aldareguia, J. P. Bergman, T. Tuomi, W. J. Clegg, E. Janzén, and L. Hultman, ibid. 389-393, 423 (2002); R. E. Stahlbush, J. B. Fedison, S. D. Arthur, L. B. Rowland, J. W. Kretchmer, and S. Wang, ibid. 389-393, 427 (2002); A. Galeckas, J. Linnros, and B. Breitholtz, ibid. 389-393, 431 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 435 (2002); R. S. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen, and L. J. Brillson, ibid. 389-393, 451 (2002); S. Bai, G. Wagner, E. Shishkin, W. J. Choyke, R. P. Devaty, M. Zhang, P. Pirouz, and T. Kimoto, ibid. 389-393, 589 (2002); H. Lendenmann, F. Dahlquist, J. P. Bergman, H. Bleichner, and C. Hallin, ibid. 389-393, 1259 (2002); L. M. Hillkrik and M. Bakowski, ibid. 389-393, 1269 (2002); J. Q. Liu, M. Skowronski, C. Hallin, R. Söderholm, and H. Lendenmann, ibid. 389-393, 1281 (2002); U. Zimmermann, J. Österman, J. Zhang, A. Henry, and A. Hallén, ibid. 389-393, 1285 (2002).
14. Concerning the electric degradation problem of SiC-based bipolar devices, see a series of contributions to the International Conference on Silicon Carbide and Related Materials, 2001, J. P. Bergman, H. Jakobsson, L. Storaste, F. H. C. Carlsson, B. Magnusson, S. Sridhara, G. Pozina, H. Lendenmann, and E. Janzén, Mater. Sci. Forum 389-393, 9 (2002); M. Skowronski, ibid. 389-393, 385 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 415 (2002); P. O. Å. Persson, H. Jacobson, J. M. Molina-Aldareguia, J. P. Bergman, T. Tuomi, W. J. Clegg, E. Janzén, and L. Hultman, ibid. 389-393, 423 (2002); R. E. Stahlbush, J. B. Fedison, S. D. Arthur, L. B. Rowland, J. W. Kretchmer, and S. Wang, ibid. 389-393, 427 (2002); A. Galeckas, J. Linnros, and B. Breitholtz, ibid. 389-393, 431 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 435 (2002); R. S. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen, and L. J. Brillson, ibid. 389-393, 451 (2002); S. Bai, G. Wagner, E. Shishkin, W. J. Choyke, R. P. Devaty, M. Zhang, P. Pirouz, and T. Kimoto, ibid. 389-393, 589 (2002); H. Lendenmann, F. Dahlquist, J. P. Bergman, H. Bleichner, and C. Hallin, ibid. 389-393, 1259 (2002); L. M. Hillkrik and M. Bakowski, ibid. 389-393, 1269 (2002); J. Q. Liu, M. Skowronski, C. Hallin, R. Söderholm, and H. Lendenmann, ibid. 389-393, 1281 (2002); U. Zimmermann, J. Österman, J. Zhang, A. Henry, and A. Hallén, ibid. 389-393, 1285 (2002).
15. Concerning the electric degradation problem of SiC-based bipolar devices, see a series of contributions to the International Conference on Silicon Carbide and Related Materials, 2001, J. P. Bergman, H. Jakobsson, L. Storaste, F. H. C. Carlsson, B. Magnusson, S. Sridhara, G. Pozina, H. Lendenmann, and E. Janzén, Mater. Sci. Forum 389-393, 9 (2002); M. Skowronski, ibid. 389-393, 385 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 415 (2002); P. O. Å. Persson, H. Jacobson, J. M. Molina-Aldareguia, J. P. Bergman, T. Tuomi, W. J. Clegg, E. Janzén, and L. Hultman, ibid. 389-393, 423 (2002); R. E. Stahlbush, J. B. Fedison, S. D. Arthur, L. B. Rowland, J. W. Kretchmer, and S. Wang, ibid. 389-393, 427 (2002); A. Galeckas, J. Linnros, and B. Breitholtz, ibid. 389-393, 431 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 435 (2002); R. S. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen, and L. J. Brillson, ibid. 389-393, 451 (2002); S. Bai, G. Wagner, E. Shishkin, W. J. Choyke, R. P. Devaty, M. Zhang, P. Pirouz, and T. Kimoto, ibid. 389-393, 589 (2002); H. Lendenmann, F. Dahlquist, J. P. Bergman, H. Bleichner, and C. Hallin, ibid. 389-393, 1259 (2002); L. M. Hillkrik and M. Bakowski, ibid. 389-393, 1269 (2002); J. Q. Liu, M. Skowronski, C. Hallin, R. Söderholm, and H. Lendenmann, ibid. 389-393, 1281 (2002); U. Zimmermann, J. Österman, J. Zhang, A. Henry, and A. Hallén, ibid. 389-393, 1285 (2002).
16. Concerning the electric degradation problem of SiC-based bipolar devices, see a series of contributions to the International Conference on Silicon Carbide and Related Materials, 2001, J. P. Bergman, H. Jakobsson, L. Storaste, F. H. C. Carlsson, B. Magnusson, S. Sridhara, G. Pozina, H. Lendenmann, and E. Janzén, Mater. Sci. Forum 389-393, 9 (2002); M. Skowronski, ibid. 389-393, 385 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 415 (2002); P. O. Å. Persson, H. Jacobson, J. M. Molina-Aldareguia, J. P. Bergman, T. Tuomi, W. J. Clegg, E. Janzén, and L. Hultman, ibid. 389-393, 423 (2002); R. E. Stahlbush, J. B. Fedison, S. D. Arthur, L. B. Rowland, J. W. Kretchmer, and S. Wang, ibid. 389-393, 427 (2002); A. Galeckas, J. Linnros, and B. Breitholtz, ibid. 389-393, 431 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 435 (2002); R. S. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen, and L. J. Brillson, ibid. 389-393, 451 (2002); S. Bai, G. Wagner, E. Shishkin, W. J. Choyke, R. P. Devaty, M. Zhang, P. Pirouz, and T. Kimoto, ibid. 389-393, 589 (2002); H. Lendenmann, F. Dahlquist, J. P. Bergman, H. Bleichner, and C. Hallin, ibid. 389-393, 1259 (2002); L. M. Hillkrik and M. Bakowski, ibid. 389-393, 1269 (2002); J. Q. Liu, M. Skowronski, C. Hallin, R. Söderholm, and H. Lendenmann, ibid. 389-393, 1281 (2002); U. Zimmermann, J. Österman, J. Zhang, A. Henry, and A. Hallén, ibid. 389-393, 1285 (2002).
17. Concerning the electric degradation problem of SiC-based bipolar devices, see a series of contributions to the International Conference on Silicon Carbide and Related Materials, 2001, J. P. Bergman, H. Jakobsson, L. Storaste, F. H. C. Carlsson, B. Magnusson, S. Sridhara, G. Pozina, H. Lendenmann, and E. Janzén, Mater. Sci. Forum 389-393, 9 (2002); M. Skowronski, ibid. 389-393, 385 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 415 (2002); P. O. Å. Persson, H. Jacobson, J. M. Molina-Aldareguia, J. P. Bergman, T. Tuomi, W. J. Clegg, E. Janzén, and L. Hultman, ibid. 389-393, 423 (2002); R. E. Stahlbush, J. B. Fedison, S. D. Arthur, L. B. Rowland, J. W. Kretchmer, and S. Wang, ibid. 389-393, 427 (2002); A. Galeckas, J. Linnros, and B. Breitholtz, ibid. 389-393, 431 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 435 (2002); R. S. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen, and L. J. Brillson, ibid. 389-393, 451 (2002); S. Bai, G. Wagner, E. Shishkin, W. J. Choyke, R. P. Devaty, M. Zhang, P. Pirouz, and T. Kimoto, ibid. 389-393, 589 (2002); H. Lendenmann, F. Dahlquist, J. P. Bergman, H. Bleichner, and C. Hallin, ibid. 389-393, 1259 (2002); L. M. Hillkrik and M. Bakowski, ibid. 389-393, 1269 (2002); J. Q. Liu, M. Skowronski, C. Hallin, R. Söderholm, and H. Lendenmann, ibid. 389-393, 1281 (2002); U. Zimmermann, J. Österman, J. Zhang, A. Henry, and A. Hallén, ibid. 389-393, 1285 (2002).
18. Concerning the electric degradation problem of SiC-based bipolar devices, see a series of contributions to the International Conference on Silicon Carbide and Related Materials, 2001, J. P. Bergman, H. Jakobsson, L. Storaste, F. H. C. Carlsson, B. Magnusson, S. Sridhara, G. Pozina, H. Lendenmann, and E. Janzén, Mater. Sci. Forum 389-393, 9 (2002); M. Skowronski, ibid. 389-393, 385 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 415 (2002); P. O. Å. Persson, H. Jacobson, J. M. Molina-Aldareguia, J. P. Bergman, T. Tuomi, W. J. Clegg, E. Janzén, and L. Hultman, ibid. 389-393, 423 (2002); R. E. Stahlbush, J. B. Fedison, S. D. Arthur, L. B. Rowland, J. W. Kretchmer, and S. Wang, ibid. 389-393, 427 (2002); A. Galeckas, J. Linnros, and B. Breitholtz, ibid. 389-393, 431 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 435 (2002); R. S. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen, and L. J. Brillson, ibid. 389-393, 451 (2002); S. Bai, G. Wagner, E. Shishkin, W. J. Choyke, R. P. Devaty, M. Zhang, P. Pirouz, and T. Kimoto, ibid. 389-393, 589 (2002); H. Lendenmann, F. Dahlquist, J. P. Bergman, H. Bleichner, and C. Hallin, ibid. 389-393, 1259 (2002); L. M. Hillkrik and M. Bakowski, ibid. 389-393, 1269 (2002); J. Q. Liu, M. Skowronski, C. Hallin, R. Söderholm, and H. Lendenmann, ibid. 389-393, 1281 (2002); U. Zimmermann, J. Österman, J. Zhang, A. Henry, and A. Hallén, ibid. 389-393, 1285 (2002).
19. Concerning the electric degradation problem of SiC-based bipolar devices, see a series of contributions to the International Conference on Silicon Carbide and Related Materials, 2001, J. P. Bergman, H. Jakobsson, L. Storaste, F. H. C. Carlsson, B. Magnusson, S. Sridhara, G. Pozina, H. Lendenmann, and E. Janzén, Mater. Sci. Forum 389-393, 9 (2002); M. Skowronski, ibid. 389-393, 385 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 415 (2002); P. O. Å. Persson, H. Jacobson, J. M. Molina-Aldareguia, J. P. Bergman, T. Tuomi, W. J. Clegg, E. Janzén, and L. Hultman, ibid. 389-393, 423 (2002); R. E. Stahlbush, J. B. Fedison, S. D. Arthur, L. B. Rowland, J. W. Kretchmer, and S. Wang, ibid. 389-393, 427 (2002); A. Galeckas, J. Linnros, and B. Breitholtz, ibid. 389-393, 431 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 435 (2002); R. S. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen, and L. J. Brillson, ibid. 389-393, 451 (2002); S. Bai, G. Wagner, E. Shishkin, W. J. Choyke, R. P. Devaty, M. Zhang, P. Pirouz, and T. Kimoto, ibid. 389-393, 589 (2002); H. Lendenmann, F. Dahlquist, J. P. Bergman, H. Bleichner, and C. Hallin, ibid. 389-393, 1259 (2002); L. M. Hillkrik and M. Bakowski, ibid. 389-393, 1269 (2002); J. Q. Liu, M. Skowronski, C. Hallin, R. Söderholm, and H. Lendenmann, ibid. 389-393, 1281 (2002); U. Zimmermann, J. Österman, J. Zhang, A. Henry, and A. Hallén, ibid. 389-393, 1285 (2002).
20. Concerning the electric degradation problem of SiC-based bipolar devices, see a series of contributions to the International Conference on Silicon Carbide and Related Materials, 2001, J. P. Bergman, H. Jakobsson, L. Storaste, F. H. C. Carlsson, B. Magnusson, S. Sridhara, G. Pozina, H. Lendenmann, and E. Janzén, Mater. Sci. Forum 389-393, 9 (2002); M. Skowronski, ibid. 389-393, 385 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 415 (2002); P. O. Å. Persson, H. Jacobson, J. M. Molina-Aldareguia, J. P. Bergman, T. Tuomi, W. J. Clegg, E. Janzén, and L. Hultman, ibid. 389-393, 423 (2002); R. E. Stahlbush, J. B. Fedison, S. D. Arthur, L. B. Rowland, J. W. Kretchmer, and S. Wang, ibid. 389-393, 427 (2002); A. Galeckas, J. Linnros, and B. Breitholtz, ibid. 389-393, 431 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 435 (2002); R. S. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen, and L. J. Brillson, ibid. 389-393, 451 (2002); S. Bai, G. Wagner, E. Shishkin, W. J. Choyke, R. P. Devaty, M. Zhang, P. Pirouz, and T. Kimoto, ibid. 389-393, 589 (2002); H. Lendenmann, F. Dahlquist, J. P. Bergman, H. Bleichner, and C. Hallin, ibid. 389-393, 1259 (2002); L. M. Hillkrik and M. Bakowski, ibid. 389-393, 1269 (2002); J. Q. Liu, M. Skowronski, C. Hallin, R. Söderholm, and H. Lendenmann, ibid. 389-393, 1281 (2002); U. Zimmermann, J. Österman, J. Zhang, A. Henry, and A. Hallén, ibid. 389-393, 1285 (2002).
21. Concerning the electric degradation problem of SiC-based bipolar devices, see a series of contributions to the International Conference on Silicon Carbide and Related Materials, 2001, J. P. Bergman, H. Jakobsson, L. Storaste, F. H. C. Carlsson, B. Magnusson, S. Sridhara, G. Pozina, H. Lendenmann, and E. Janzén, Mater. Sci. Forum 389-393, 9 (2002); M. Skowronski, ibid. 389-393, 385 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 415 (2002); P. O. Å. Persson, H. Jacobson, J. M. Molina-Aldareguia, J. P. Bergman, T. Tuomi, W. J. Clegg, E. Janzén, and L. Hultman, ibid. 389-393, 423 (2002); R. E. Stahlbush, J. B. Fedison, S. D. Arthur, L. B. Rowland, J. W. Kretchmer, and S. Wang, ibid. 389-393, 427 (2002); A. Galeckas, J. Linnros, and B. Breitholtz, ibid. 389-393, 431 (2002); J. Q. Liu, E. K. Sanchez, and M. Skowronski, ibid. 389-393, 435 (2002); R. S. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen, and L. J. Brillson, ibid. 389-393, 451 (2002); S. Bai, G. Wagner, E. Shishkin, W. J. Choyke, R. P. Devaty, M. Zhang, P. Pirouz, and T. Kimoto, ibid. 389-393, 589 (2002); H. Lendenmann, F. Dahlquist, J. P. Bergman, H. Bleichner, and C. Hallin, ibid. 389-393, 1259 (2002); L. M. Hillkrik and M. Bakowski, ibid. 389-393, 1269 (2002); J. Q. Liu, M. Skowronski, C. Hallin, R. Söderholm, and H. Lendenmann, ibid. 389-393, 1281 (2002); U. Zimmermann, J. Österman, J. Zhang, A. Henry, and A. Hallén, ibid. 389-393, 1285 (2002).
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