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Journal of Applied Physics

Volumn 99, Issue 1, 2006, Pages

Degradation of hexagonal silicon-carbide-based bipolar devices

(2) Skowronski, M a Ha, S a,b

a CARNEGIE MELLON UNIVERSITY (United States)

b Samsung Corning Co Ltd (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON HOLE PLASMA; HIGH-VOLATGE P-I-N DIODES; PARTIAL DISLOCATION;

ACTIVATION ENERGY; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; SEMICONDUCTOR DIODES; SILICON CARBIDE; STACKING FAULTS;

BIPOLAR SEMICONDUCTOR DEVICES;

EID: 30944453305 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2159578 Document Type: Article

Times cited : (454)

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