Formation of bubbles by high dose He implantation in 4H-SiC

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1179-1186

  Oliviero, E ^a   David, M L ^a   Beaufort, M F ^a   Nomgaudyte, J ^b   Pranevicius, L ^b   Declemy A ^a   Barbot, J F ^a  

^a UNIVERSITÉ DE POITIERS   (France)

^b VYTAUTAS MAGNUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; AMORPHOUS STATE; CROSS-SECTION TRANSMISSION ELECTRON MICROSCOPIES; CRYSTALLINE ZONES; DAMAGED REGION; DISTRIBUTION PROFILES; HE IMPLANTATION; HIGH DOSE; HIGH-TEMPERATURE ANNEALING; INDUCED DEFECTS; INFRARED REFLECTIVITY; POLYTYPES; PROBABILITY FUNCTIONS; REDISTRIBUTION PROCESS; ROOM TEMPERATURE; STRAIN-INDUCED EFFECTS; TEM OBSERVATIONS; THREE-LAYER; VOIDS FORMATION; XRD;

ION IMPLANTATION; MONOLAYERS; SILICON CARBIDE; X RAY DIFFRACTION;

ANNEALING;

EID: 0036470818     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1429760     Document Type: Article

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