Band structure interpretation of the optical transitions between low-lying conduction bands in n-type doped SiC polytypes

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 271-274

  Lambrecht, W R L ^a   Limpijumnong, S ^a   Rashkeev, S N ^a   Segall, B ^a  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

Author keywords

Band Structure; Optical Absorption

Indexed keywords

ABSORPTION SPECTROSCOPY; BAND STRUCTURE; LIGHT ABSORPTION; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

LOW LYING CONDUCTION BANDS; POLYTYPES;

SILICON CARBIDE;

EID: 0031675060     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.271     Document Type: Article

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