Comparative growth behavior of 3C-SiC mesa heterofilms with and without extended defects

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 261-264

  Trunek, A J ^a   Neudeck, P G ^a   Powell, J A ^a   Spry, D J ^a  

^a NASA GLENN RESEARCH CENTER   (United States)

Author keywords

3C SiC; AFM; CVD; Epitaxial Growth; Heteroepitaxy; Nucleation; Stacking Faults

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; NUCLEATION; OXIDATION; SAMPLING; STACKING FAULTS;

3C-SIC; BILAYERS; GROWTH RATE; HETEROEPITAXY;

SILICON CARBIDE;

EID: 8744251218     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.261     Document Type: Conference Paper

References (13)

1. P. Pirouz, et al: Mat. Res. Soc. Symp. Proc. Vol. 91 (1987) p. 399.
2. H. Nagasawa, et al: Mater. Sci. Forum Vol. 433-436 (2003) p. 3.
3. J. A. Powell, et al: Appl. Phys. Lett. Vol. 59 (1991) p. 183.
4. P. G. Neudeck, et al: this conference (2003).
5. P. G. Neudeck and J. A. Powell: in Recent Major Advances in SiC, edited by W. J. Choyke, H. Matsunami and G. Pensl (Springer-Verlag, Heidelberg, Germany 2003) p. 179.
6. P. G. Neudeck, et al: Mater. Sci. Forum Vol. 433-436 (2003) p. 213.
7. P. G. Neudeck, et al: Mater. Sci. Forum Vol. 389-393 (2002) p. 311.
8. Cree Inc., Durham, NC USA, http://www.cree.com.
9. Aixtron 200/4HT, Aixtron GmbH, Aachen, Germany, http://www.aixtron.com.
10. J. A. Powell, et al: Appl. Phys. Lett. vol. 77 (2000) p. 1449.
11. D. J. Spry, A. J. Trunek, and P. G. Neudeck, this conference (2003).
12. M. Dudley, W. M. Vetter, and P. G. Neudeck: J. Cryst. Growth Vol 240 (2002) p. 22.
13. P. G. Neudeck, et al: Electronic Materials Conference, Salt Lake City, UT, 2003.