Structure of stacking faults formed during the forward bias of 4h-SiC p-i-n diodes

Applied Physics Letters

Volumn 82, Issue 15, 2003, Pages 2410-2412

  Twigg, M E ^a   Stahlbush, R E ^a   Fatemi, M ^a   Arthur, S D ^b   Fedison, J B ^b   Tucker, J B ^b   Wang, S ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b GENERAL ELECTRIC COMPANY   (United States)

^c Sterling Semiconductor Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; IMAGING TECHNIQUES; LIGHT EMISSION; PLASTIC DEFORMATION; SEMICONDUCTOR JUNCTIONS; SHEAR STRESS; SILICON CARBIDE; STACKING FAULTS; STRAIN; TEMPERATURE; TENSILE STRESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

FORWARD BIASING;

SEMICONDUCTOR DIODES;

EID: 0037624568     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1566794     Document Type: Article

References (21)

1. S. Ha, P. Mieszkowski, M. Skowronski, and L. B. Roland, J. Cryst. Growth 244, 257 (2002).
2. H. Lendenmann, F. Dahlquist, N. Johansson, R. Söderholm, P. A. Nilsson, J. P. Bergman and P. Skytt, Mater. Sci. Forum 353-356, 727 (2001).
3. J. P. Bergman, H. Lendenmann, P. A. Nilsson, U. Lindefelt, and P. Skytt, Mater. Sci. Forum 353-356, 299 (2001).
4. J. Q. Liu, M. Skowronski, C. Hallin, R. Soderholm, and H. Lendemann, Appl. Phys. Lett. 80, 749 (2001).
5. A. Galeckas, J. Linros, and B. Breitholtz, J. Appl. Phys. 90, 980 (2001).
6. R. E. Stahlbush, M. Fatemi, J. B. Fedison, S. D. Arthur, L. B. Rowland, and S. Wang, J. Electron. Mater. 31, 827 (2002).
7. H. Lendenmnn, F. Dahlquist, J. P. Bergmann, H. Bleicher, and C. Hallin, Mater. Sci. Forum 89-393, 1259 (2002).
8. R. Perez, Phys. Status Solidi A 85, 113 (1984).
9. R. Gevers, J. Van Landuyt, and S. Amelinckx, Phys. Status Solidi 11, 689 (1965).
10. K. Marukawa, Philos. Mag. 40, 303 (1979).
11. S. S. Ruvimov and K. Scheerschmidt, Phys. Status Solidi A 141, 269 (1994).
12. P. Hirsh, A. Howic, R. B. Nicholson, D. W. Pashley, and M. J. Whelan, Electron Microscopy of Thin Crystals (Krieger, Huntington, NY, 1977).
13. J. P. Hirth and J. Lothe, Theory of Dislocations (Krieger, Marabar, FL, 1992).
14. P. Pirouz, J. L. Demenet, and M. H. Hong, Philos. Mag. A 81, 1207 (2001).
15. H. Alexander, H. Eppenstein, H. Gottschalk, and S. Wendler, J. Phys. Colloq. 40, C6 (1979).
16. H. Jacobsen, J. Birch, R. Yakimova, M. Syväjärvi, and J. P. Bergman, A. Ellison, T. Tuomi, and E. Jansen, J. Appl. Phys. 91, 6354 (2002).
17. M. Skowronski, J. Q. Liu, W. M. Vetter, M. Dudley, C. Hallin, and H. Lendermann, J. Appl. Phys. 92, 4699 (2002).
18. M. E. Twigg, R. E. Stahlbush, and M. Fatemi, S. D. Arthur, J. B. Fedison, and J. B. Tucker, and S. Wang, Mater. Res. Soc. Symp. Proc. 742, K3.7.1 (2003).
19. A. Galeckas, J. Linnros, and P. Pirouz, Appl. Phys. Lett. 81, 883 (2002).
20. P. Pirouz, Solid State Phenom. 56, 107 (1997).
21. C. Levade, A. Faress, and G. Vanderschaeve, Philos. Mag. A 69, 855 (1994).