SiC studied via LEEN and cathodoluminescence spectroscopy

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 543-548

  Brillson, L J ^a   Tumakha, S ^a   Okojie, R S ^b   Zhang, M ^c   Pirouz, P ^c  

^a OHIO STATE UNIVERSITY   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

^c CASE WESTERN RESERVE UNIVERSITY   (United States)

Author keywords

Defect; Luminescence spectroscopy; Metal SiC interface; Nanoscale; Polytype; Stacking fault

Indexed keywords

ANNEALING; CAPACITANCE; CATHODOLUMINESCENCE; CHEMICAL BONDS; CRYSTAL DEFECTS; INTERFACES (MATERIALS); METALLIZING; SPECTROSCOPIC ANALYSIS; STACKING FAULTS;

CAPACITANCE SPECTROSCOPY; CATHODOLUMINESCENCE SPECTROSCOPY; ELECTRON CASCADE PROFILES; LOW ENERGY ELECTRON-EXCITED NANOSCALE (LEEN) SPECTROSCOPY; METAL SIC INTERFACES; NANOSCALE; POLYTYPE;

SILICON CARBIDE;

EID: 8744287533     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.543     Document Type: Conference Paper

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