Long term operation of 4.5kV PiN and 2.5kV JBS diodes

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 727-730

  Lendenmann, H ^a   Dahlquist, F ^a   Johansson, N ^a   Soderholm R ^a   Nilsson, P A ^a   Bergman, J P ^a   Skytt, P ^a  

^a ABB CORPORATE RESEARCH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; INSULATED GATE BIPOLAR TRANSISTORS; SEMICONDUCTOR DIODES; SEMICONDUCTOR SWITCHES;

HIGH VOLTAGE; LARGE AREA DIODE;

SILICON CARBIDE;

EID: 2342603447     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.727     Document Type: Article

References (6)

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