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Volumn 483-485, Issue , 2005, Pages 331-334

Intensity ratio of the doublet signature of excitons bound to 3C-SiC stacking faults in a 4H-SiC matrix

Author keywords

3c stacking faults; 4H SiC; Quantum wells thickness

Indexed keywords

ELECTRON TRAPS; EXCITONS; HOLE TRAPS; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE;

INTENSITY RATIO; QUANTUM WELLS THICKNESS; RELATIVE INTENSITY;

STACKING FAULTS;

EID: 33646591009 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/0-87849-963-6.331 Document Type: Conference Paper

Times cited : (11)

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