Recent achievements and future challenges in SiC homoepitaxial growth

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 165-170

  Kimoto, T ^a   Nakazawa, S ^a   Fujihira, K ^a   Hirao, T ^a   Nakamura, S ^a   Chen, Y ^a   Hashimoto, K ^a   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

(033 8) plane; (112 0) plane; Deep level; Homoepitaxial growth; Hot wall CVD; Impurity doping

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); DOPING (ADDITIVES); EPILAYERS; HIGH TEMPERATURE EFFECTS; SILICON CARBIDE; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; SEMICONDUCTOR DOPING;

HOMOEPITAXIAL GROWTH; HOT-WALL CVD; IMPURITY DOPING; (033 8) PLANE; (112 0) PLANE; DEEP-LEVEL; HOT WALL;

EPITAXIAL GROWTH; GROWTH RATE;

EID: 0037872711     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.165     Document Type: Article

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