Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 77, Issue 1, 2000, Pages 50-54

  Savkina, N S ^a   Lebedev, A A ^a   Davydov, D V ^a   Strel'chuk, A M ^a   Tregubova, A S ^a   Raynaud, C ^b   Chante, J P ^b   Locatelli, M L ^b   Planson, D ^b   Milan, J ^c   Godignon, P ^c   Campos, F J ^c   Mestres, N ^c   Pascual, J ^c   Brezeanu, G ^d   Badila, M ^e  

^a IOFFE INSTITUTE   (Russian Federation)

^b CNRS   (France)

^c UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^d UP   (Romania)

^e NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON BEAMS; EPITAXIAL GROWTH; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBLIMATION;

SUBLIMATION EPITAXIAL GROWTH;

SEMICONDUCTING FILMS;

EID: 0034246736     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00464-5     Document Type: Article

References (15)

1. Tairov Y.M., Tsvetkov V.F. Izv. Akad. Nauk. USSR Ser. Neorg. Mater. 13:1977;1606.
2. Konstantinov A.O., Mokhov E.N. Pis'ma Zh. Tekn. Fiz. 7:1981;247.
3. Konstantinov A.O., Mokhov E.N. Sov. Tech. Phys. Lett. 7:1981;106.
4. Anikin M.M., Lebedev A.A., Pyatko S.N., Syrkin A.L., Strel'chuk A.M. Mater. Sci. Eng. B. 11:1992;113.
5. Lebedev A.A., Chelnokov V.E. Diamond Relat. Mater. 3:1994;1393.
6. Dalibor T., Pensl G., Matsunami H., Kimoto T., Choyke W.J., Schoner A., Nordel N. Phys. Status Solidi A. 162:1997;199.
7. Kong H.S., Glass J.T., Davis R.F. Appl. Phys. Lett. 64:1988;2672.
8. Larkin D.J., Neudeck P.G., Powell J.A., Matus L.G. Appl. Phys. Lett. 65:1994;1661.
9. S. Nishino, T. Yoshida, K. Matsumoto, Y. Chen, S.K. Lylov. Abstr. 2nd European Conf. on SiC and Related Mater., September 2-4, 1998, Montpellier, France, pp. 27.
10. M. Syvajavi, R. Yakimova, E.A.M. Johanson, Q. Wahab, A. Henry, C. Hallin, E. Janzen. Abstr. 2nd European Conf. on SiC and Related Mater., September 2-4, 1998, Montpellier, France, pp. 123.
11. Anikin M.M., Kuznetsov N.I., Lebedev A.A., Strel'chuk A.M., Syrkin A.L. Sov. Phys. Semicond. 24:1990;869.
12. Suzuki A., Matsunami H., Tanaka T. J. Electochem. Soc. 124:1977;241.
13. P.A. Ivanov, Y.V. Morozenko, I.V. Popov, A.V. Suvorov. In Technology of fast power semiconductor devices. Tallin, Valgus, USSR, 1984, pp. 191-195 (in Russian).
14. A.L. Syrkin, J.-M. Bluet, C. Dezauzier, T. Bretagnon, S. Contreras, J.-L. Robert, G. Bastide, J. Camassel, M.M. Anikin. Inst. Phys. Conf. No. 142 IOP Publishing (1196), pp. 189-192.
15. Anikin M.M., Zubrilov A.S., Lebedev A.A., Strel'chuk A.M., Cherenkov A.E. Sov. Phys. Semicond. 25:1991;289.