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Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1061-1064

High breakdown field P-type 3C-SiC schottky diodes grown on step-free 4H-SiC mesas

(3) Spry, D J a Trunek, A J a Neudeck, P G a

a NASA GLENN RESEARCH CENTER (United States)

Author keywords

3C SiC; 4H SiC; Breakdown electric field; Schottky diode; Step free surface

Indexed keywords

CAPACITANCE MEASUREMENT; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); ELECTRIC BREAKDOWN; ELECTRIC FIELDS; EPITAXIAL GROWTH; HETEROJUNCTIONS; MOSFET DEVICES; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; STACKING FAULTS; SURFACE CLEANING;

HETEROEPILAYER STRUCTURES; INVERSION CHANNEL; SCREW DISLOCATIONS; STEP-FREE SURFACE; THERMAL OXIDATION;

SCHOTTKY BARRIER DIODES;

EID: 8744265118 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.457-460.1061 Document Type: Conference Paper

Times cited : (12)

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