Capacitance spectroscopy of deep centres in SIC

Materials Science Forum

Volumn 258-263, Issue PART 2, 1997, Pages 715-720

  Lebedev, A A ^a   Sobolev, N A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Deep centres; DLTS; Luminescence; Silicon carbide; Structural defects

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COLOR CENTERS; DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXIAL GROWTH; LUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SUBLIMATION;

CAPACITANCE SPECTROSCOPY; DEEP CENTERS; POLYTYPE TRANSFORMATION;

SILICON CARBIDE;

EID: 3743146152     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.715     Document Type: Article

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