Saturated vertical drift velocity of electrons in silicon carbide polytypes

Semiconductors

Volumn 33, Issue 5, 1999, Pages 547-550

  Sankin, V I ^a   Lepneva, A A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033131540     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187725     Document Type: Article

References (9)

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8. V. I. Sankin and A. A. Lepneva, in Proceedings of the International Symposium "Nanostructures: Physics and Technology" (St. Petersburg, Russia, 1997), p. 155.
9. V. I. Sankin and I. A. Stolichnov, JETP Lett. 64, 114 (1996).