SiC/SiO2 interface states: Properties and models

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 563-568

  Afanas'ev, V V ^a   Ciobanu, F ^b   Dimitrijev, S ^c   Pensl, G ^b   Stesmans, A ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c GRIFFITH UNIVERSITY   (Australia)

Author keywords

Carbon clusters; Dangling bonds; Interface traps; Oxide defects

Indexed keywords

CARBON CLUSTERS; DANGLING BONDS; ENERGY GAP; MATHEMATICAL MODELS;

INTERFACE TRAPS; OXIDE DEFECTS;

INTERFACES (MATERIALS);

EID: 31544458745     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.563     Document Type: Conference Paper

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