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Volumn 24, Issue 9, 1999, Pages 33-38

Optoelectronic properties and applications of rare-earth-doped GaN

(2)  Steckl, A J a   Zavada, J M a  

a NONE

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CATHODOLUMINESCENCE; ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; LIGHT EMISSION; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; RARE EARTH ELEMENTS; SEMICONDUCTOR DOPING;

EID: 0033356629     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/S0883769400053045     Document Type: Article
Times cited : (262)

References (35)
  • 3
    • 0343200608 scopus 로고
    • EPIC-S-15 Electronic Properties Information Center, Hughes Aircraft, Culver City, CA
    • M. Neuberger, II-VI Ternary Compound Data Tables, EPIC-S-15 (Electronic Properties Information Center, Hughes Aircraft, Culver City, CA, 1972).
    • (1972) II-VI Ternary Compound Data Tables
    • Neuberger, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.