Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 91, Issue 92, 2002, Pages 317-320

  Savkina, N ^a   Tregubova, A ^a   Scheglov, M ^a   Solov'ev, V ^a   Volkova, A ^a   Lebedev, A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

3C SiC epilayer; EBIC; Optical microscopy; SE; Surface morphology; X ray diffraction

Indexed keywords

ELECTRON BEAMS; EPITAXIAL GROWTH; HIGH TEMPERATURE OPERATIONS; INDUCED CURRENTS; INTERFACES (MATERIALS); OPTICAL MICROSCOPY; OXIDATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SUBLIMATION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ELECTRON BEAM-INDUCED CURRENT (EBIC); EPILAYERS GROWTH; VACUUM SUBLIMATION;

SILICON CARBIDE;

EID: 0037197471     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)01053-4     Document Type: Article

References (8)