Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 151-159

  Si, Weimin ^a   Dudley, Michael ^a   Kong, Hua Shuang ^b   Sumakeris, Joe ^b   Carter Jr , Calvin ^b  

^a Stony Brook University   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

3C SiC; 4H SiC; Epitaxy; Synchrotron white beam x ray topography (SWBXT)

Indexed keywords

EID: 0347278105     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0142-4     Document Type: Article

References (17)

1. P.A. Ivanov and V.E. Chelnokov, Semiconductor Science and Technology 7, 863 (1992).
2. J.W. Palmour, J.A. Edmond, H.S. Kong and C.H. Carter, Jr., Phys. B 185, 461 (1993).
3. A.R. Verma and P. Krishna Polymorphism and Polytypism in Crystals, (New York: Wiley Press, 1966).
4. G.R. Fisher and P. Barnes, Phil. Mag. B 61, 217 (1990).
5. W.F. Knippenberg, Philips Res. Rep. 18, 161 (1963).
6. H.S. Kong, J.T. Glass and R.F. Davis, J. Appl. Phys. 64, 2672 (1988).
7. T. Ueda, H. Nishino and H. Matsunami, J. Cryst. Growth 104, 695 (1990).
8. J.A. Powell, D.J. Larkin and P.B. Abel, J. Electron. Mater. 24 (4), 295 (1995).
9. S. Wang, M. Dudley, C.H. Carter, Jr. and H.S. Kong, Diamond, SiC and Nitride Wide Bandgap Semiconductors, eds. C.H. Carter, Jr., G. Gildenblat, S. Nakamura and R.J. Nemanich, 339 (Pittsburgh, PA: Materials Research Society, 1994), p. 735.
10. M. Dudley, W. Huang, S. Wang, J.A. Powell, P. Neudeck and C. Fazi, J. Phys. D: Appl. Phys. 28, A56 (1995).
11. S. Wang, M. Dudley, W. Huang, C.H. Carter, Jr., V.F. Tsvetkov and C. Fazi, Semiconductor Characterization Present Status and Future Needs, eds. W.M. Bullis, D.G. Seiler and A.C. Diebold, (Woodbury, NY: AIP Press, 1996), p. 278.
12. H.S. Kong, J.T. Glass and R.F. Davis, J. Mater. Res. 4 (1), 204 (1989).
13. M. Dudley, S. Wang, W. Huang, C.H. Carter, Jr., V.F. Tsvetkov and C. Fazi, J. Phys. D: Appl. Phys. 28, A63 (1995).
14. A.A. Burk, Jr., D.L. Barrett, H.M. Hobgood, R.R. Siergiej, T.T. Braggins, R.C. Clarke, G.E. Eldridge, C.D. Brandt, D.J. Larkin, J.A. Powell and W.J. Choyke, Silicon Carbide and Related Materials: Proc. Fifth Intl. Conf., Institute of Physics Conf. Series, No. 137, (Bristol, United Kingdom: IOP Publishing, 1994), p. 29.
15. J.A. Powell, J.B. Petit, J.H. Edgar, I.G. Jenkins, L.G. Matus, J.W. Yang, P. Pirouz, W.J. Choyke, L. Clemen and M. Yoganaathan, Appl. Phys. Lett. 59 (3), 333 (1991).
16. T. Kimoto and H. Matsunami, J. Appl. Phys. 75, 850 (1994).
17. C. Hallin, A.O. Konstantinov, O. Kordina and E. Janzen, Silicon Carbide and Related Materials: Proc. Sixth Intl. Conf., Institute of Physics Conf. Series, No. 142, (Bristol, United Kingdom: IOP Publishing, 1996), p. 85.