Residual stresses and stacking faults in N-Type 4H-SiC epllayers

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 529-532

  Okojie, R S ^a   Zhang, M ^b   Pirouz, P ^b  

^a NASA GLENN RESEARCH CENTER   (United States)

^b Case Western Reserve University   (United States)

Author keywords

4H SiC; In Situ Optical Measurement; Stacking Faults; Stress; TEM

Indexed keywords

ANNEALING; ARGON; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); EPITAXIAL GROWTH; HETEROJUNCTIONS; NITROGEN; RESIDUAL STRESSES; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

4H-SIC; IN SITU OPTICAL MEASUREMENT; INTERNAL STRESS; NITROGEN DOPING;

STACKING FAULTS;

EID: 8744243158     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (12)

1. U. Lindefelt and H. Iwata, in "Recent Major Advances in SiC", Springer-Verlag, Berlin (2003). In press.
2. M. S. Miao, S. Limpijumnong, and W. R. L. Lambrecht, Appl. Phys. Lett. 79(26), p. 4360 (2001).
3. R. S. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen, and L. J. Brillson, Appl. Phys. Lett. 79(19), p. 3056 (2001).
4. J. Q. Liu, H. J. Chung, T. Kuhr, Q. Li, and M. Skowronski, Appl. Phys. Lett. 80(12), p. 2111 (2002).
5. T. A. Kuhr, J. Liu, H. J. Chung, M. Skowronski, and F. Szmulowic, J. of Appl. Phys. 92(10), p. 5863 (2002).
6. Frontier Semiconductor, Inc, 1631 North First Street, San Jose, CA 95112 USA.
7. R. S. Okojie, These proceedings.
8. M. Ohring, The Materials Science of Thin Films, Academic Press, Inc., New York. (1992).
9. B. E. Landini and G. R. Brandes, Appl. Phys. Lett. 74(18), p. 2632 (1999).
10. St. G. Müller, R. C. Glass, H. M. Hobgood, V. F. Tsvetkov, M. Brady, D. Henshall, J. R Jenny, D. Malta and C. H. Carter Jr., J. Cryst. Growth, 211(1-4). p. 325 (2002).
11. V. F. Tsvetkov, D. N. Henshall, M. F. Brady, R. C. Glass, and J. C. H. Carter, Mat. Res. Soc. Symp. Proc. 512, p. 89 (1998).
12. B. J. Skromme, K. Palle, C. D. Poweleit, L. R. Bryant, W. M. Vetter, M. Dudley, K. Moore, and T. Gehoski, Mat. Sci. Forum, 389-393, p. 455 (2001).