Investigation of 3C-SiC epitaxial layers grown by sublimation epitaxy

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Davydov, D V ^a   Lebedev, A A ^a   Tregubova, A S ^a   Kozlovski, V V ^b   Kuznetsov, A N ^a   Bogdanova, E V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; FILM GROWTH; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; SUBLIMATION; SUBSTRATES; VAPOR PHASE EPITAXY; X RAY CRYSTALLOGRAPHY;

PROTON IRRADIATION; SUBLIMATION EPITAXY;

SILICON CARBIDE;

EID: 0033718660     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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