SCOPUS 정보 검색 플랫폼

Semiconductors

Volumn 33, Issue 2, 1999, Pages 107-130

Deep level centers in silicon carbide: A review

(1) Lebedev, A A a

a IOFFE INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033075954 PISSN: 10637826 EISSN: None Source Type: Journal
DOI: 10.1134/1.1187657 Document Type: Review

Times cited : (284)

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