Crystal growth of 6H-SiC(01-14) on 3C-SiC(001) substrate by sublimation epitaxy

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 289-292

  Takagi, H ^a   Nishiguchi, T ^a   Ohta, S ^a   Furusho, T ^a   Ohshima, S ^a   Nishino, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

6H SiC(01 14); Photoluminescence; Polytype Transformation; Raman Scattering Spectroscopy; Sublimation Epitaxy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; EPITAXIAL GROWTH; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY;

6H-SIC(01-14); POLYTYPE TRANSFORMATION; RAMAN SCATTERING SPECTROSCOPY; SUBLIMATION EPITAXY;

SILICON CARBIDE;

EID: 8744298320     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.289     Document Type: Conference Paper

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