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Volumn 6, Issue 10, 1997, Pages 1276-1281

Surface polarity dependence in step-controlled epitaxy: Progress in SiC epitaxy

Author keywords

C Si ratio dependance; Step bunching; Step controlled epitaxy; Surface polarity dependance

Indexed keywords


EID: 0008544940     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(97)00104-0     Document Type: Article
Times cited : (8)

References (33)
  • 22
    • 0006281025 scopus 로고
    • Silicon carbide and related materials
    • 1-3 November, 1993, Washington DC, USA, Eds: M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan and M. Rahman, Institute of Physics, Bristol
    • S. Tyc, Silicon Carbide and Related Materials, Proceedings of the Fifth Conference, 1-3 November, 1993, Washington DC, USA, Eds: M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan and M. Rahman, Institute of Physics, Bristol, 1994, p. 333.
    • (1994) Proceedings of the Fifth Conference , pp. 333
    • Tyc, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.