Characterization of double stacking faults induced by thermal processing of heavily n-doped 4H-SiC substrates

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 581-584

  Skromme, B J ^a   Mikhov, M K ^a   Chen, L ^a   Samson, G ^a   Wang, R ^b   Li, C ^b   Bhat, I ^b  

^a Arizona State University   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Electrostatic force microscopy; Heavy doping; Oxidation; Photoluminescence; Polytype transformation; Raman scattering; Secondary electron imaging; Stacking faults

Indexed keywords

DATA REDUCTION; DOPING (ADDITIVES); ELECTRON TRANSITIONS; HYDROGEN; OXIDATION; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTOR QUANTUM WELLS; STACKING FAULTS; THERMOANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTROSTATIC FORCE MICROSCOPY; HEAVY DOPING; POLYTYPE TRANSFORMATIONS; SECONDARY ELECTRON IMAGING;

SILICON CARBIDE;

EID: 8744264974     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.581     Document Type: Conference Paper

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