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Volumn 95, Issue 3, 2004, Pages 1485-1488

Properties and origins of different stacking faults that cause degradation in SiC PiN diodes

Author keywords

[No Author keywords available]

Indexed keywords

CRACK PROPAGATION; DISLOCATIONS (CRYSTALS); ELECTRIC LOSSES; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; EPITAXIAL GROWTH; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICON CARBIDE; STACKING FAULTS; STORAGE RINGS; SYNCHROTRON RADIATION;

EID: 1142269575     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1635996     Document Type: Article
Times cited : (99)

References (11)
  • 3
    • 20244366745 scopus 로고    scopus 로고
    • Doctoral thesis, Linköping University, Linköping, Sweeden
    • P. O. Å. Persson, Doctoral thesis, Linköping University, Linköping, Sweeden, 2001.
    • (2001)
    • Persson, P.O.Å.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.