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Volumn 95, Issue 3, 2004, Pages 1485-1488
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Properties and origins of different stacking faults that cause degradation in SiC PiN diodes
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Author keywords
[No Author keywords available]
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Indexed keywords
CRACK PROPAGATION;
DISLOCATIONS (CRYSTALS);
ELECTRIC LOSSES;
ELECTRIC POTENTIAL;
ELECTROLUMINESCENCE;
EPITAXIAL GROWTH;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR DOPING;
SILICON CARBIDE;
STACKING FAULTS;
STORAGE RINGS;
SYNCHROTRON RADIATION;
ELECTRIC DEGRADATION;
ELECTROLUMINESCENCE MEASUREMENT;
PIN DIODES;
VOLTAGE DROP;
SEMICONDUCTOR DIODES;
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EID: 1142269575
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1635996 Document Type: Article |
Times cited : (99)
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References (11)
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