Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 253-256

  Chung, Hun Jae ^a   Liu, Jin Qiang ^a   Henry, Anne ^b   Skowronski, Marek ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Electron Microscopy; Stacking Faults; Structural Defects

Indexed keywords

ANNEALING; DOPING (ADDITIVES); STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

MECHANICAL STRESS;

SILICON CARBIDE;

EID: 0242581450     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.253     Document Type: Conference Paper

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