Approaches to stabilizing the forward voltage of bipolar SiC devices

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1113-1116

  Sumakeris, J J ^a   Das, M ^a   McD Hobgood, H ^a   Muller S G ^a   Paisley, M J ^a   Ha, S ^b   Skowronski, M ^b   Palmour, J W ^a   Carter Jr , C H ^a  

^a Arkansas Power Electronics International Inc   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

Basal plane dislocations; Stacking faults; Vf drift

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRIC POTENTIAL; ELECTRIC RECTIFIERS; NUCLEATION; OPTICAL MICROSCOPY; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; STACKING FAULTS; TEMPERATURE CONTROL; THICKNESS MEASUREMENT;

BASAL PLANE DISLOCATIONS; BIPOLAR POWER DEVICES; DRIFT LAYERS; EPILAYERS; VOLTAGE DRIFT;

BIPOLAR SEMICONDUCTOR DEVICES;

EID: 8744289799     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1113     Document Type: Conference Paper

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