Growth defects in GaN films on sapphire: The probable origin of threading dislocations

Journal of Materials Research

Volumn 11, Issue 3, 1996, Pages 580-592

  Ning, X J ^a   Chien, F R ^a   Pirouz, P ^a   Yang, J W ^b   Asif Khan, M ^b  

^a Case Western Reserve University   (United States)

^b APA Optronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); FILMS; SAPPHIRE; SINGLE CRYSTALS;

GALLIUM NITRIDE; GALLIUM NITRIDE FILMS; THREADING DISLOCATIONS; WURTZITE STRUCTURE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030108963     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1996.0071     Document Type: Article

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