Stacking fault formation in SiC p-i-n diodes of (11-20) orientation

Applied Physics Letters

Volumn 84, Issue 25, 2004, Pages 5267-5269

  Ha, S ^a   Hu, K ^a   Skowronski, M ^a   Sumakeris, J J ^b   Paisley, M J ^b   Das, M K ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL STRESSES; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); OPTICAL EMISSION MICROSCOPY (OEM); PHYSICAL VAPOR TRANSPORT METHOD;

CHEMICAL VAPOR DEPOSITION; CRYSTALLOGRAPHY; CURRENT DENSITY; ELECTROLUMINESCENCE; EPITAXIAL GROWTH; LATTICE CONSTANTS; METALLIZING; NUCLEATION; OPTICAL MICROSCOPY; SEMICONDUCTOR DIODES; SHEAR STRESS; STACKING FAULTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION; X RAY DIFFRACTION;

SILICON CARBIDE;

EID: 3142754283     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1765209     Document Type: Article

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