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Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 157-162

Characterization of SiC epitaxial structures using high-resolution X-ray diffraction techniques

(5) Huang, X R a Dudley, M a Cho, W a Okojie, R S b Neudeck, P G b

a Stony Brook University (United States)

b NASA GLENN RESEARCH CENTER (United States)

Author keywords

Characterization; High resolution X ray diffraction; Reciprocal space mapping; SiC epitaxial structure

Indexed keywords

CRYSTAL LATTICES; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; MOLECULAR STRUCTURE; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL STRUCTURES; HIGH RESOLUTION X RAY DIFFRACTION; LATTICE MISMATCH; LATTICE PERFECTION; RECIPROCAL SPACE MAPPING; SIC EPITAXIAL STRUCTURES;

SILICON CARBIDE;

EID: 8744290938 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.457-460.157 Document Type: Conference Paper

Times cited : (10)

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