Ion beam induced amorphization and recrystallization of Si/SiC/Si layer systems

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 120, Issue 1-4, 1996, Pages 133-138

  Volz, K ^a   Lindner, J K N ^a   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CRYSTALLIZATION; EPITAXIAL GROWTH; ION BEAMS; ION BOMBARDMENT; SILICON CARBIDE; SILICON COMPOUNDS;

EPITAXIAL CRYSTALLIZATION; ION BEAM SYNTHESIS; RECRYSTALLIZATION;

ION IMPLANTATION;

EID: 0030566569     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00495-8     Document Type: Article

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