Stacking fault formation sites and growth in thick-epi SiC PiN diodes

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 533-536

  Stahlbush, R E ^a   Twigg, M E ^a   Irvine, K G ^b   Sumakeris, J J ^b   Chow, T P ^c   Losee, P A ^c   Zhu, L ^c   Tang, Y ^c   Wang, W ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Dislocations; Nucleation sites; PiN diodes; Stacking faults; Vf degradation

Indexed keywords

DIODES; DISLOCATIONS (CRYSTALS); ELECTRIC POTENTIAL; EPITAXIAL GROWTH; HETEROJUNCTIONS; IMAGING TECHNIQUES; LIGHT EMISSION; NUCLEATION; SILICON CARBIDE;

LIGHT EMISSION IMAGING; PIN DIODES; VF DEGRADATION; VOLTAGE DROP;

STACKING FAULTS;

EID: 8744283740     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.533     Document Type: Conference Paper

References (8)

1. J.P. Bergmann, H. Lendenmann, P.A. Nilsson, U. Lindenfelt and P. Skytt, Mater. Sci. Forum Vol. 353-356 (2001), p. 299.
2. R.E. Stahlbush, M. Fatemi, J.B. Fedison, S.D. Arthur, L.B. Rowland and S. Wang: J. Elec. Mat. Vol. 31 (2002), p. 370.
3. H. Lendenmann, F. Dahlquist, J.P. Bergmann, H. Bleichner and C. Hallin: Mater. Sci. Forum Vol. 389-393 (2002), p. 1259.
4. A. Galeckas, J. Linnros, and P. Pirouz, Appl. Phys. Lett. Vol. 81 (2002), p. 883.
5. M.E. Twigg, R.E. Stahlbush, M. Fatemi, S.D. Arthur, J.B. Fedison, J.B. Tucker and S. Wang: Appl. Phys. Lett. Vol. 82 (2003), p. 2010.
6. M.S. Miao, S. Limpijumnong, W.R.L. Lambrecht: Appl. Phys. Lett. Vol. 79 (2001), p. 4360.
7. M. Skowronski, J.Q. Lui, W.M. Vetter, M. Dudley, C. Hallin, and H. Lendenmann, J. Appl. Phys. Vol. 92 (2002), p. 4699.
8. M.E. Twigg, R.E. Stahlbush, M. Fatemi, S.D. Arthur, J.B. Fedison, J.B. Tucker, and S. Wang, submitted to J. Elec. Mater.