Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods

Journal of Electron Microscopy

Volumn 49, Issue 2, 2000, Pages 331-338

  Kuwano, Noriyuki ^a   Tsukamoto, Keisuke ^a,e   Taki, Wataru ^a,d   Horibuchi, Kayo ^a   Oki, Kensuke ^a   Kawaguchi, Yasutoshi ^b   Shibata, Takumi ^b   Sawaki, Nobuhiko ^b   Hiramatsu, Kazumasa ^c  

^a KYUSHU UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c MIE UNIVERSITY   (Japan)

^d SHARP CORPORATION   (Japan)

^e HITACHI LTD   (Japan)

Author keywords

Cross section observation; Dislocation; Epitaxial lateral growth; Gallium nitride; Metalorganic vapour phase epitaxy; Selective area growth

Indexed keywords

GRAIN BOUNDARIES; III-V SEMICONDUCTORS; ION BEAMS; METALLORGANIC VAPOR PHASE EPITAXY; TRANSMISSION ELECTRON MICROSCOPY;

AREA GROWTHS; CROSS-SECTION OBSERVATION; DISLOCATION; EPITAXIAL LATERAL GROWTH; GROWTH CONDITIONS; HYDRIDE VAPOR PHASE EPITAXY; LATERAL GROWTH; METAL-ORGANIC VAPOUR PHASE EPITAXY; SELEAIVE AREA GROWTH; TRANSMISSION ELECTRON;

GALLIUM NITRIDE;

EID: 0034013047     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/oxfordjournals.jmicro.a023813     Document Type: Article

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