Homoepitaxial growth and characterization of thick SiC layers with a reduced micropipe density

Materials Research Society Symposium Proceedings

Volumn 815, Issue , 2004, Pages 35-46

  Tsuchida, H ^a   Kamata, I ^a   Izumi, S ^a   Tawara, T ^a   Jikimoto, T ^a   Miyanagi, T ^a   Nakamura, T ^a   Izumi, K ^a  

^a Central Research Institute   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL REACTORS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); EPITAXIAL GROWTH; ETCHING; GROWTH KINETICS; MICROSCOPES; MORPHOLOGY; PHOTOLUMINESCENCE; SCHOTTKY BARRIER DIODES; SECONDARY ION MASS SPECTROMETRY; STACKING FAULTS;

GROWTH RATE; MICROPIPE DENSITY; NORMARSKI OPTICAL MICROSCOPE; X-RAY TOPOGRAPHY;

SILICON CARBIDE;

EID: 12844286226     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-815-j2.1     Document Type: Conference Paper

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