Dislocation nucleation in 4H silicon carbide epitaxy

Journal of Crystal Growth

Volumn 262, Issue 1-4, 2004, Pages 130-138

  Ha, S ^a   Chung, H J ^a   Nuhfer, N T ^a   Skowronski, M ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

A1. Characterization; A1. Line defects; A1. Nucleation; A3. Chemical vapor deposition processes; B1. Silicon carbide; B2. Semiconducting materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); ETCHING; NUCLEATION; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; VECTORS;

HOMOEPITAXIAL LAYERS; LINE DEFECTS;

EPITAXIAL GROWTH;

EID: 0842279559     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.09.054     Document Type: Article

References (23)

1. Jaszek R. J. Mater. Sci.: Mater. Electron. 12:2001;1.
2. Neudeck P.G., Powell J.A. IEEE Electron Devices Lett. 15:1994;63.
3. Wahab Q., Ellison A., Henry A., Janzén E., Hallin C., Di Persio J., Martinez R. Appl. Phys. Lett. 76:1999;2725.
4. Neudeck P.G., Huang W., Dudley M. IEEE Trans. Electron Devices. 46:1999;478.
5. Janzén E., Henry A., Bergman J.P., Ellison A., Magnusson B. Mater. Sci. Semicond. Process. 4:2001;181.
6. Wang S., Dudley M., Carter C.H. Jr., Kong H.S. Mater. Res. Soc. Symp. Proc. 339:1994;735.
7. Si W., Dudley M., Kong H.S., Sumakeris J., Carter C.H. Jr. J. Electron. Mater. 26:1997;151.
8. Lendenmann H., Dahlquist F., Johansson N., Söderholm R., Nilsson P.A., Bergman J.P., Skytt P. Mater. Sci. Forum. 353-356:2001;727.
9. Bergman J.P., Lendenmann H., Nilsson P.Å., Lindefelt U., Skytt P. Mater. Sci. Forum. 353-356:2001;299.
10. Liu J.Q., Skowronski M., Hallin C., Söderholm R., Lendenmann H. Appl. Phys. Lett. 80:2002;749.
11. Skowronski M., Liu J.Q., Vetter W.M., Dudley M., Hallin C., Lendenmann H. J. Appl. Phys. 92:2002;4699.
12. Jacobson H., Birch J., Yakimova R., Syväjärvi M., Bergman J.P., Ellison A., Tuomi T., Janzén E. J. Appl. Phys. 91:2002;6354.
13. Takahashi J., Kanaya M., Fujiwara Y. J. Crystal Growth. 135:1994;61.
14. Ha S., Vetter W.M., Dudley M., Skowronski M. Mater. Sci. Forum. 389-393:2002;443.
15. Takahashi J., Ohtani N., Kanaya M. J. Crystal Growth. 167:1996;596.
16. Ha S., Nuhfer N.T., Rohrer G.S., De Graef M., Skowronski M. J. Crystal Growth. 220:2000;308.
17. Ha S., Vetter W.M., Dudley M., Skowronski M. J. Appl. Phys. 92:2002;778.
18. Ha S., Mieszkowski P., Skowronski M., Rowland L.B. J. Crystal Growth. 244:2002;257.
19. Sanchez E.K., Ha S., Grim J., Skowronski M., Vetter W.M., Dudley M., Bertke R., Mitchel W.C. J. Electrochem. Soc. 149:2002;G131.
20. D. Hull, D.J. Bacon, Introduction to Dislocations, 3rd Edition, Butterworth-Heinemann, Oxford, 1984, pp. 19-22, 52-53.
21. Booker G.R., Titchmarsh J.M., Fletcher J., Darby D.B., Hockly M., Al-Jassim M. J. Crystal Growth. 45:1978;407.
22. J.P. Hirth, J. Lothe, Theory of Dislocations, 2nd Edition, Krieger Publishing Company, Malabar, FL, 1982, pp. 17-24.
23. Chung H.C., Skowronski M. J. Crystal Growth. 259:2003;52.