Replication of defects from 4H-SiC wafer to epitaxial layer

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 447-450

  Ohno, T ^a   Yamaguchi, H ^b   Kojima, K ^a   Nishio, J ^a   Masahara, K ^b   Ishida, Y ^b   Takahashi, T ^b   Suzuki, T ^a   Yoshida, S ^b  

^a R&D Association for Future Electron Devices   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

4H SiC; Basal plane dislocations; Epitaxial layers; Screw dislocations; X ray topography

Indexed keywords

EPITAXIAL LAYERS; SCREW DISLOCATIONS; SCREWS; SILICON CARBIDE; SILICON WAFERS; TOPOGRAPHY; X RAYS;

4H-SIC; BASAL PLANE DISLOCATIONS; HIGH RESOLUTION XRD; X-RAY TOPOGRAPHY;

EPITAXIAL GROWTH;

EID: 0037966593     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028Avww.scientific.net/MSF.3S9-393.447     Document Type: Conference Paper

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