Doping-induced strain in N-doped 4H-SiC crystals

Applied Physics Letters

Volumn 82, Issue 21, 2003, Pages 3689-3691

  Jacobson, H ^a   Birch, J ^a   Hallin, C ^a   Henry, A ^a   Yakimova, R ^a   Tuomi, T ^a   Janzen E ^a   Lindefelt, U ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ABB CORPORATE RESEARCH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); MATHEMATICAL MODELS; STRESSES; X RAYS;

LATTICE COMPRESSION;

SILICON CARBIDE;

EID: 0038645890     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1579120     Document Type: Article

References (10)

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