BIFET - A novel bipolar SIC switch for high voltage power electronics

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1245-1248

  Mitlehner, H ^a   Friedrichs, P ^a   Elpelt, R ^a   Dohnke, K O ^a   Schorner R ^a   Stephani, D ^a  

^a SIEMENS AG   (Germany)

Author keywords

Bipolar conductivity; Cascode; Electrical characterization; P doped epitaxial layers; SiC switching device

Indexed keywords

APPROXIMATION THEORY; DOPING (ADDITIVES); ELECTRIC POTENTIAL; POWER ELECTRONICS; SILICON CARBIDE; SWITCHES; SWITCHING;

BIPOLAR CONDUCTIVITY; CASCODE; ELECTRICAL CHARACTERIZATION; P-DOPED EPITAXIAL LAYERS; SIC SWITCHING DEVICE;

FIELD EFFECT TRANSISTORS;

EID: 8644290138     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1245     Document Type: Conference Paper

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