Structural analysis and reduction of in-grown stacking faults in 4H-SiC epilayers

Applied Physics Letters

Volumn 86, Issue 20, 2005, Pages 1-3

  Izumi, S ^a,b   Tsuchida, H ^a   Kamata, I ^a   Tawara, T ^a  

^a Central Research Institute   (Japan)

^b FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; ETCHING; PHOTOLUMINESCENCE; SPECTRUM ANALYSIS; STACKING FAULTS; STRUCTURAL ANALYSIS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

EPILAYER THICKNESS; EPILAYERS; PLANER DEFECTS; SCREW DISLOCATION;

SILICON COMPOUNDS;

EID: 20844444332     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1927274     Document Type: Article

References (5)

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