Density functional based modelling of 30° partial dislocations in SiC

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 453-456

  Blumenau, A T ^a   Jones, R ^b   Oberg S ^c   Briddon, P R ^d   Frauenheim, T ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

^b UNIVERSITY OF EXETER   (United Kingdom)

^c LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^d NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

Device degradation; Dislocations; Recombination enhanced glide; SiC; Stacking faults

Indexed keywords

APPROXIMATION THEORY; BINDING ENERGY; DEGRADATION; DISLOCATIONS (CRYSTALS); ELECTRONIC STRUCTURE; PROBABILITY DENSITY FUNCTION; STACKING FAULTS; STRESS ANALYSIS;

DEVICE DEGRADATION; MODELLING; PIN DIODES; RECOMBINATION ENHANCED GLIDE;

SILICON CARBIDE;

EID: 8744298316     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.453     Document Type: Conference Paper

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